Industrial Automatic Control Systems and Controllers Annotation << Back The Temperature Conditions of the Power Transistors in Their Monitoring and Diagnostics Domanov V.I. DomanovA.V. Zaytsev V.A. Analyzed the thermal processes in the measurement and testing of power semiconductors, related to their heating. Settle heating and cooling processes of the transistor. Analyzed the temperature regime at energy cycling on semiconductor devices. Developed a thermal model of the transistor - sensor for such tests. Calculated heating and cooling modes. The necessity of temperature correction. Developed energy cycling control algorithm, given module of operative diagnosis of the condition of the test transistor. The way of measuring the thermal resistance of the transistor threshold voltage values​​. Substantiates the methodology of the measurement process. The synthesis of the control part of the meter. Expressions to calculate the thermal resistance by design and technological characteristics of the crystal. The necessity of taking into account parameter distribution when using this method of measurement of thermal resistance. Keywords: transistor; thermal processes; energy cycling; thermal resistance; model; algorithm; diagnostics; threshold voltage. Contacts: E-mail: andrew.domanov@gmail.com Pp. 44-50.